CEL NE97833-T1B-A RF BJT Transistors
-50mA 50mA 12V
IN STOCK
Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please sendRFQ, we will respond immediately
NE97833-T1B-A Tech Specifications
| Category | Transistors - Bipolar (BJT) - RF | |
| Manufacturer | CEL | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Number of Pins | 3Pins | |
| Collector-Emitter Breakdown Voltage | 12V | |
| Current-Collector (Ic) (Max) | 50mA | |
| Number of Elements | 1 Element | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Power Dissipation | 200mW | |
| Frequency | 5.5GHz |
| Element Configuration | Single | |
| Power Dissipation | 200mW | |
| Transistor Type | PNP | |
| Collector Emitter Voltage (VCEO) | 12V | |
| Max Collector Current | 50mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 15mA 10V | |
| Gain | 10dB | |
| Collector Base Voltage (VCBO) | 20V | |
| Emitter Base Voltage (VEBO) | 3V | |
| Continuous Collector Current | -50mA | |
| Noise Figure (dB Typ @ f) | 2dB @ 1GHz | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
Select at least one checkbox above to show similar products in this category.
NE97833-T1B-A Documents
Download datasheets and manufacturer documentation for NE97833-T1B-A
- PCN Obsolescence/ EOLEOL 12/Aug/2016 EOL Revision 10/Nov/2016
- DatasheetsNE97833-T1B-A-CEL-datasheet-11889755.pdf
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ