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2N3819 Tech Specifications

Category Transistors - FETs, MOSFETs - RF
Manufacturer Central
Factory Lead Time 6 Weeks
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface Mount NO
Weight 453.59237mg
Transistor Element Material SILICON
Number of Elements 1 Element
Operating Temperature (Max.) 150°C
Packaging Bulk
Published 2001
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.21.00.95
Max Power Dissipation 360mW
Terminal Position BOTTOM
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code O-PBCY-T3
Qualification Status Not Qualified
Element Configuration Single
Operating Mode DEPLETION MODE
Power Dissipation 360mW
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 25V
Transistor Type N-Channel JFET
Continuous Drain Current (ID) 20mA
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 0.02A
FET Technology JUNCTION
Feedback Cap-Max (Crss) 4 pF
RoHS Status Non-RoHS Compliant
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2N3819 Documents

Download datasheets and manufacturer documentation for   2N3819

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