Comchip Technology 2N3906-G Single BJT Transistors
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2N3906-G Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | Comchip Technology | |
| Factory Lead Time | 10 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 40V | |
| Collector-Emitter Saturation Voltage | -400mV | |
| Number of Elements | 1 Element | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Bag | |
| Published | 2012 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Terminal Position | BOTTOM |
| JESD-30 Code | O-PBCY-T3 | |
| Element Configuration | Single | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | PNP | |
| Transistor Type | PNP | |
| Collector Emitter Voltage (VCEO) | 400mV | |
| Max Collector Current | 200mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 100mA 1V | |
| Current - Collector Cutoff (Max) | 100nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA | |
| Transition Frequency | 250MHz | |
| Frequency - Transition | 250MHz | |
| Collector Base Voltage (VCBO) | -40V | |
| Emitter Base Voltage (VEBO) | -5V | |
| Turn Off Time-Max (toff) | 300ns | |
| Turn On Time-Max (ton) | 70ns | |
| RoHS Status | ROHS3 Compliant |
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2N3906-G Documents
Download datasheets and manufacturer documentation for 2N3906-G
- Datasheets2N3906-G Datasheet
- PCN PackagingLabel D/C Chg 24/Mar/2016
- Environmental InformationComchip RoHS3 Cert
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