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BC847CW-G Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer Comchip Technology
Package / Case SOT-323-3
Surface Mount YES
Number of Terminals 3Terminals
Transistor Element Material SILICON
RoHS Details
Mounting Styles SMD/SMT
Transistor Polarity NPN
Collector- Emitter Voltage VCEO Max 45 V
Emitter- Base Voltage VEBO 6 V
Collector-Emitter Saturation Voltage 600 mV
Maximum DC Collector Current 100 mA
Pd - Power Dissipation 150 mW
Gain Bandwidth Product fT 100 MHz
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
DC Collector/Base Gain hfe Min 420 at 2mA, 5 V
DC Current Gain hFE Max 800 at 2 mA, 5 V
Factory Pack QuantityFactory Pack Quantity 3000
Unit Weight 0.000176 oz
Operating Temperature-Max 150
Transition Frequency-Nom (fT) 100
Package Description SMALL OUTLINE, R-PDSO-G3
Package Style SMALL OUTLINE
Package Body Material PLASTIC/EPOXY
Reflow Temperature-Max (s) 30
Rohs Code Yes
Manufacturer Part Number BC847CW-G
Package Shape RECTANGULAR
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer COMCHIP TECHNOLOGY CO LTD
Risk Rank 2.38
Series BC847
Packaging MouseReel
JESD-609 Code e3
Terminal Finish Tin (Sn)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
JESD-30 Code R-PDSO-G3
Configuration Single
Polarity/Channel Type NPN
Collector Base Voltage (VCBO) 50 V
Power Dissipation-Max (Abs) .15
Collector Current-Max (IC) .1
DC Current Gain-Min (hFE) 420
Continuous Collector Current 100 mA
Collector-Emitter Voltage-Max 45 V
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