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MMBT2907A-G Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer Comchip Technology
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Weight 1.437803g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 60V
Current-Collector (Ic) (Max) 600mA
Number of Elements 1 Element
hFEMin 100
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin (Sn)
Max Power Dissipation 350mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 200MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G3
Element Configuration Single
Power - Max 250mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 20nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Transition Frequency 200MHz
Emitter Base Voltage (VEBO) -5V
Continuous Collector Current -600mA
Turn Off Time-Max (toff) 285ns
Turn On Time-Max (ton) 35ns
RoHS Status ROHS3 Compliant
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