MMBT3906-HF Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer Comchip Technology
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Collector-Emitter Breakdown Voltage 40V
Collector-Emitter Saturation Voltage -300mV
Current-Collector (Ic) (Max) 200mA
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 300mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Gain Bandwidth Product 250MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
Transition Frequency 250MHz
Collector Base Voltage (VCBO) -40V
Emitter Base Voltage (VEBO) -5V
Continuous Collector Current -200mA
RoHS Status ROHS3 Compliant
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