Comchip Technology MMBT5551-G RF BJT Transistors
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MMBT5551-G Tech Specifications
| Category | Transistors - Bipolar (BJT) - RF | |
| Manufacturer | Comchip Technology | |
| Surface Mount | YES | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| RoHS | Details | |
| Factory Pack QuantityFactory Pack Quantity | 3000 | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Package Style | SMALL OUTLINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | 30 | |
| Rohs Code | Yes | |
| Transition Frequency-Nom (fT) | 100 MHz | |
| Manufacturer Part Number | MMBT5551-G | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | COMCHIP TECHNOLOGY CO LTD | |
| Risk Rank | 7.87 |
| Series | MMBT5551 | |
| Packaging | MouseReel | |
| JESD-609 Code | e3 | |
| Type | RF Bipolar Power | |
| Terminal Finish | TIN | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| JESD-30 Code | R-PDSO-G3 | |
| Configuration | SINGLE | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | NPN | |
| Transistor Type | Bipolar Power | |
| Collector Current-Max (IC) | 0.6 A | |
| DC Current Gain-Min (hFE) | 50 | |
| Collector-Emitter Voltage-Max | 160 V |
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