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PTFB201402FC-V2-R250 Tech Specifications

Category Transistors - FETs, MOSFETs - RF
Manufacturer Cree
Package / Case H-37248-4
RoHS Details
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 65 V
Rds On - Drain-Source Resistance 300 mOhms
Maximum Operating Temperature + 225 C
Mounting Styles SMD/SMT
Factory Pack QuantityFactory Pack Quantity 250
Vgs - Gate-Source Voltage 10 V
Packaging Reel
Type RF Power MOSFET
Operating Frequency 2010 MHz to 2025 MHz
Number of Channels 1 ChannelChannel
Output Power 140 W
Transistor Type LDMOS FET
Gain 16 dB
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