BC847BS-7-F Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays
Manufacturer Diodes
Factory Lead Time 15 Weeks
Package / Case 6-TSSOP, SC-88, SOT-363
Mounting Type Surface Mount
Mount Surface Mount
Contact Plating Tin
Number of Pins 6Pins
Weight 6.010099mg
Transistor Element Material SILICON
hFEMin 200
Number of Elements 2 Elements
Collector-Emitter Saturation Voltage 100mV
Collector-Emitter Breakdown Voltage 45V
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Max Power Dissipation 200mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 100MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BC847BS
Pin Count 6
Polarity NPN
Voltage 45V
Element Configuration Dual
Current 1A
Power Dissipation 200mW
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 20nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA
Transition Frequency 100MHz
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 6V
Max Junction Temperature (Tj) 150°C
Width 1.35mm
Length 2.2mm
Height 1.1mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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