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BC847PN-7-F Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays
Manufacturer Diodes
Factory Lead Time 15 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6Pins
Weight 6.010099mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 45V
Collector-Emitter Saturation Voltage 600mV
Number of Elements 2 Elements
hFEMin 200
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Termination SMD/SMT
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Max Power Dissipation 200mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 300MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BC847PN
Pin Count 6
Polarity NPN, PNP
Element Configuration Dual
Power Dissipation 200mW
Case Connection ISOLATED
Gain Bandwidth Product 300MHz
Transistor Type NPN, PNP
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V / 220 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
Transition Frequency 300MHz
Max Breakdown Voltage 45V
Frequency - Transition 300MHz 200MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 6V
Height 1mm
Length 2.2mm
Width 1.35mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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BC847PN-7-F Documents

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