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BC856B-7-F Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer Diodes
Factory Lead Time 19 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Weight 7.994566mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage -65V
Collector-Emitter Saturation Voltage -250mV
Current-Collector (Ic) (Max) 100mA
Number of Elements 1 Element
hFEMin 220
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination SMD/SMT
ECCN Code EAR99
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 200MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BC856B
Pin Count 3
Element Configuration Single
Power Dissipation 310mW
Transistor Application SWITCHING
Gain Bandwidth Product 200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) -65V
Max Collector Current -100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 65V
Transition Frequency 200MHz
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) -80V
Emitter Base Voltage (VEBO) -5V
Max Junction Temperature (Tj) 150°C
Height 1.1mm
Length 3.05mm
Width 1.4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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