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DMG1016UDW-7 Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer Diodes
Factory Lead Time 16 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6Pins
Weight 6.010099mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 1.07A 845mA
Number of Elements 2 Elements
Turn Off Delay Time 26.7 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Resistance 750mOhm
Additional Feature HIGH RELIABILITY
Max Power Dissipation 330mW
Terminal Position DUAL
Terminal Form GULL WING
Base Part Number DMG1016UDW
Pin Count 6
Operating Mode ENHANCEMENT MODE
Power Dissipation 330mW
Turn On Delay Time 5.1 ns
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 450m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 60.67pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 0.74nC @ 4.5V
Rise Time 7.4ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 12.3 ns
Continuous Drain Current (ID) -845mA
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 6V
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Height 1.1mm
Length 2.2mm
Width 1.35mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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