DMMT5401-7-F Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays
Manufacturer Diodes
Factory Lead Time 19 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6Pins
Weight 29.993795mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 150V
Collector-Emitter Saturation Voltage -500mV
Number of Elements 2 Elements
Voltage Rated 50V
hFEMin 60
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Tolerance 1%
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Resistance 56.2kOhm
Power Rating 100mW
Voltage - Rated DC -150V
Max Power Dissipation 300mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -200mA
Frequency 300MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number DMMT5401
Pin Count 6
Case Code (Metric) 1608
Case Code (Imperial) 0603
Polarity PNP
Element Configuration Dual
Power Dissipation 300mW
Transistor Application SWITCHING
Gain Bandwidth Product 300MHz
Transistor Type 2 PNP (Dual) Matched Pair
Collector Emitter Voltage (VCEO) 150V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Transition Frequency 100MHz
Max Breakdown Voltage 150V
Collector Base Voltage (VCBO) 160V
Emitter Base Voltage (VEBO) 5V
Height 450μm
Length 1.6mm
Width 800μm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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