Diodes Incorporated DMN3035LWN-7 MOSFETs Transistors Arrays
770mW 30V
IN STOCK
: 3099
Min. : 1
Mult. : 1
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DMN3035LWN-7 Tech Specifications
| Category | Transistors - FETs, MOSFETs - Arrays | |
| Manufacturer | Diodes | |
| Factory Lead Time | 14 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerVDFN | |
| Number of Pins | 8Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2015 | |
| JESD-609 Code | e4 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) | |
| Max Power Dissipation | 770mW | |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | R-PDSO-N6 | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Power - Max | 770mW | |
| FET Type | 2 N-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 35m Ω @ 4.8A, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 399pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 9.9nC @ 10V | |
| Drain to Source Voltage (Vdss) | 30V | |
| Continuous Drain Current (ID) | 5.5A | |
| Drain-source On Resistance-Max | 0.035Ohm | |
| DS Breakdown Voltage-Min | 30V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Standard | |
| RoHS Status | ROHS3 Compliant |
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DMN3035LWN-7 Documents
Download datasheets and manufacturer documentation for DMN3035LWN-7
- Environmental InformationDiodes RoHS 3 Cert
- DatasheetsDMN3035LWN
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