DXTN3C100PD-13 Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays
Manufacturer Diodes
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package PowerDI5060-8 (Type UXD)
Mfr Diodes Incorporated
Package Tape & Reel (TR)
Product Status Active
Current-Collector (Ic) (Max) 3A
Factory Pack QuantityFactory Pack Quantity 2500
Manufacturer Diodes Incorporated
Brand Diodes Incorporated
Series -
Operating Temperature -55°C ~ 150°C (TJ)
Packaging Cut Tape
Subcategory Transistors
Power - Max 1.47W
Product Type BJTs - Bipolar Transistors
Transistor Type 2 NPN (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 500mA, 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 330mV @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max) 100V
Frequency - Transition 130MHz
Product Category Bipolar Transistors - BJT
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