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FMMT495TA Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer Diodes
Factory Lead Time 15 Weeks
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Mount Surface Mount
Contact Plating Tin
Number of Pins 3Pins
Weight 7.994566mg
Transistor Element Material SILICON
hFEMin 100
Number of Elements 1 Element
Collector-Emitter Saturation Voltage 300mV
Collector-Emitter Breakdown Voltage 150V
Published 2006
Packaging Cut Tape (CT)
Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 150V
Max Power Dissipation 500mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 1A
Frequency 100MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number FMMT495
Element Configuration Single
Power Dissipation 500mW
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 150V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 250mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 50mA, 500mA
Transition Frequency 100MHz
Max Breakdown Voltage 150V
Collector Base Voltage (VCBO) 170V
Emitter Base Voltage (VEBO) 7V
Max Junction Temperature (Tj) 150°C
Continuous Collector Current 1A
Width 1.4mm
Length 3mm
Height 1.1mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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