LMN200B02-7 Tech Specifications

Category Transistors - Special Purpose
Manufacturer Diodes
Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6Pins
Weight 6.010099mg
Collector-Emitter Saturation Voltage -300mV
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Applications Load Switch
Additional Feature BUILT IN BIAS RESISTOR
Voltage - Rated DC -50V
Current Rating (Amps) 200mA PNP 115mA N-Channel
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 115mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number LMN200
Pin Count 6
Polarity PNP
Configuration SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR AND RESISTOR
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Transistor Type PNP Pre-Biased, N-Channel Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 200mA
Max Frequency 200MHz
Drain Current-Max (Abs) (ID) 0.115A
Drain-source On Resistance-Max 2Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Collector Base Voltage (VCBO) -50V
Emitter Base Voltage (VEBO) -5V
DC Current Gain-Min (hFE) 60
VCEsat-Max 0.3 V
Feedback Cap-Max (Crss) 5 pF
Height 1mm
Length 2.2mm
Width 1.35mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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