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MMBT5551-7-F Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer Diodes
Factory Lead Time 13 Weeks
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Mount Surface Mount
Number of Pins 3Pins
Weight 7.994566mg
Transistor Element Material SILICON
hFEMin 30
Number of Elements 1 Element
Collector-Emitter Saturation Voltage 200mV
Collector-Emitter Breakdown Voltage 160V
Published 2008
Series Automotive, AEC-Q101
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 160V
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 200mA
Frequency 300MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MMBT5551
Pin Count 3
Element Configuration Single
Power Dissipation 300mW
Transistor Application SWITCHING
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 160V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Transition Frequency 100MHz
Max Breakdown Voltage 160V
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) 6V
Max Junction Temperature (Tj) 150°C
Continuous Collector Current 200mA
Width 1.4mm
Length 3.05mm
Height 1.1mm
RoHS Status ROHS3 Compliant
Radiation Hardening No
REACH SVHC No SVHC
Lead Free Lead Free
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