Diodes Incorporated MMBTH10-7 RF BJT Transistors
25V 50mA 50mA
IN STOCK
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MMBTH10-7 Tech Specifications
| Category | Transistors - Bipolar (BJT) - RF | |
| Manufacturer | Diodes | |
| Mount | Surface Mount | |
| Package / Case | SOT-23 | |
| Number of Pins | 3Pins | |
| Weight | 7.994566mg | |
| Collector-Emitter Breakdown Voltage | 25V | |
| Collector-Emitter Saturation Voltage | 500mV | |
| Number of Elements | 1 Element | |
| hFEMin | 60 | |
| Packaging | Tape & Reel (TR) | |
| Published | 2003 | |
| JESD-609 Code | e0 | |
| Part Status | Discontinued | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn85Pb15) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Voltage - Rated DC | 25V | |
| Max Power Dissipation | 300mW | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 235 |
| Reach Compliance Code | not_compliant | |
| Current Rating | 50mA | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Pin Count | 3 | |
| Qualification Status | Not Qualified | |
| Polarity | NPN | |
| Element Configuration | Single | |
| Transistor Application | AMPLIFIER | |
| Gain Bandwidth Product | 650MHz | |
| Collector Emitter Voltage (VCEO) | 25V | |
| Max Collector Current | 50mA | |
| Transition Frequency | 650MHz | |
| Max Breakdown Voltage | 25V | |
| Collector Base Voltage (VCBO) | 30V | |
| Emitter Base Voltage (VEBO) | 3V | |
| Continuous Collector Current | 50mA | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY B | |
| Collector-Base Capacitance-Max | 0.7pF | |
| Height | 1mm | |
| Length | 3.05mm | |
| Width | 1.4mm | |
| REACH SVHC | No SVHC | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Contains Lead |
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MMBTH10-7 Documents
Download datasheets and manufacturer documentation for MMBTH10-7
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