Diodes Incorporated ZXMN10A11GFTC Specialized Transistors
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: 97820
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ZXMN10A11GFTC Tech Specifications
| Category | Transistors - Special Purpose | |
| Manufacturer | Diodes | |
| Surface Mount | YES | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | DIODES INC | |
| Package Description | SMALL OUTLINE, R-PDSO-G4 | |
| Drain Current-Max (ID) | 1.3 A | |
| Moisture Sensitivity Levels | 1 | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| JESD-609 Code | e3 |
| ECCN Code | EAR99 | |
| Terminal Finish | MATTE TIN | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | R-PDSO-G4 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 0.6 Ω | |
| DS Breakdown Voltage-Min | 100 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 3.9 W |
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ZXMN10A11GFTC Documents
Download datasheets and manufacturer documentation for ZXMN10A11GFTC
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