DIJ4A5N65 Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 650V
Drain current 2.7A
Pulsed drain current 28A
Case TO220FP
Gate-source voltage ±30V
Mounting THT
Kind of package tube
Kind of channel enhanced
Gross weight 2.82g
Certificates RoHS compliant
Power dissipation 46W
Gate charge 22nC
On-state resistance 1.3Ω
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