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DI050N06D1 Tech Specifications
Category | Transistors - Special Purpose | |
Manufacturer | ||
Surface Mount | YES | |
Number of Terminals | 2Terminals | |
Transistor Element Material | SILICON | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | DIOTEC SEMICONDUCTOR AG | |
Drain Current-Max (ID) | 50 A | |
Moisture Sensitivity Levels | 1 | |
Number of Elements | 1 Element | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
JESD-609 Code | e3 | |
ECCN Code | EAR99 | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Additional Feature | AVALANCHE RATED |
Terminal Position | SINGLE | |
Terminal Form | GULL WING | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Reach Compliance Code | compliant | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
JESD-30 Code | R-PSSO-G2 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Operating Mode | ENHANCEMENT MODE | |
Case Connection | DRAIN | |
Transistor Application | SWITCHING | |
Polarity/Channel Type | N-CHANNEL | |
JEDEC-95 Code | TO-252AA | |
Drain-source On Resistance-Max | 0.011 Ω | |
Pulsed Drain Current-Max (IDM) | 160 A | |
DS Breakdown Voltage-Min | 65 V | |
Avalanche Energy Rating (Eas) | 36 mJ | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Power Dissipation-Max (Abs) | 42 W | |
Feedback Cap-Max (Crss) | 15 pF |
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DI050N06D1 Documents
Download datasheets and manufacturer documentation for DI050N06D1
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