Diotec Semiconductor AG DI110N04PQ Specialized Transistors
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DI110N04PQ Tech Specifications
| Category | Transistors - Special Purpose | |
| Manufacturer | ||
| Surface Mount | YES | |
| Number of Terminals | 8Terminals | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Date Of Intro | 2020-08-21 | |
| Ihs Manufacturer | DIOTEC SEMICONDUCTOR AG | |
| Part Life Cycle Code | Active | |
| Rohs Code | Yes | |
| Drain Current-Max (ID) | 110 A | |
| Moisture Sensitivity Levels | 1 | |
| JESD-609 Code | e2 | |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver (Sn96.5Ag3.5) | |
| Additional Feature | AVALANCHE RATED | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | R-PDSO-F8 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 0.0025 Ω | |
| Pulsed Drain Current-Max (IDM) | 450 A | |
| DS Breakdown Voltage-Min | 40 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 45 W | |
| Feedback Cap-Max (Crss) | 35 pF |
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DI110N04PQ Documents
Download datasheets and manufacturer documentation for DI110N04PQ
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