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EPC2102 Tech Specifications
| Category | Transistors - FETs, MOSFETs - Arrays | |
| Manufacturer | EPC | |
| Factory Lead Time | 14 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | Die | |
| Supplier Device Package | Die | |
| Current - Continuous Drain (Id) @ 25℃ | 23A | |
| Operating Temperature | -40°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | eGaN® |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| FET Type | 2 N-Channel (Half Bridge) | |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 20A, 5V | |
| Vgs(th) (Max) @ Id | 2.5V @ 7mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 830pF @ 30V | |
| Gate Charge (Qg) (Max) @ Vgs | 6.8nC @ 5V | |
| Drain to Source Voltage (Vdss) | 60V | |
| FET Feature | GaNFET (Gallium Nitride) | |
| RoHS Status | ROHS3 Compliant |
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EPC2102 Documents
Download datasheets and manufacturer documentation for EPC2102
- DatasheetsEPC2102
- PCN Assembly/OriginMult Dev TR Assembly Chg 14/Dec/2018
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