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EAPST1608A0 Tech Specifications
| Category | Optical Sensors - Phototransistors | |
| Manufacturer | Everlight Electronics | |
| Factory Lead Time | 10 Weeks | |
| Package / Case | 0603 (1608 metric) | |
| Collector- Emitter Voltage VCEO Max | 30 V | |
| Collector-Emitter Breakdown Voltage | 30 V | |
| Collector-Emitter Saturation Voltage | 0.4 V | |
| Factory Pack QuantityFactory Pack Quantity | 3000 | |
| RoHS | Details | |
| Mounting Styles | SMD/SMT | |
| Maximum On-State Collector Current | 0.9 mA | |
| Pd - Power Dissipation | 75 mW | |
| Minimum Operating Temperature | - 25 C | |
| Maximum Operating Temperature | + 85 C |
| Moisture Sensitive | Yes | |
| Schedule B | 8541407080 | |
| Manufacturer Part Number | EAPST1608A0 | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | EVERLIGHT ELECTRONICS CO LTD | |
| Risk Rank | 1.45 | |
| Packaging | Cut Tape | |
| Type | IR Chip | |
| Reach Compliance Code | compliant | |
| Optoelectronic Device Type | PHOTO TRANSISTOR | |
| Wavelength | 940 nm | |
| Dark Current | 100 nA | |
| Product | Phototransistors |
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