Fairchild Semiconductor PN2907ARA Arrays BJT Transistors
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PN2907ARA Tech Specifications
| Category | Transistors - Bipolar (BJT) - Arrays | |
| Manufacturer | Fairchild | |
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| Supplier Device Package | TO-92 (TO-226) | |
| Mfr | Fairchild Semiconductor | |
| Package | Bulk | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 800mA |
| Series | - | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Power - Max | 625mW | |
| Transistor Type | PNP | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V | |
| Current - Collector Cutoff (Max) | 50nA | |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA | |
| Voltage - Collector Emitter Breakdown (Max) | 60V | |
| Frequency - Transition | 200MHz |
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