2N7002E Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer FUXINSEMI
RoHS true
Drain Source Voltage (Vdss) 60V
Power Dissipation (Pd) 350mW
Drain Source On Resistance (RDS(on)@Vgs,Id) 1Ω@10V,0.5A
Gate Threshold Voltage (Vgs(th)@Id) 2.5V@1mA
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