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2N7002E Tech Specifications
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | FUXINSEMI | |
| RoHS | true | |
| Drain Source Voltage (Vdss) | 60V | |
| Power Dissipation (Pd) | 350mW | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 1Ω@10V,0.5A | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@1mA |
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