BC847B Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer FUXINSEMI
RoHS true
Collector Cut-Off Current (Icbo) 100nA
Collector-Emitter Breakdown Voltage (Vceo) 45V
Power Dissipation (Pd) 200mW
DC Current Gain (hFE@Ic,Vce) 800@2mA,5V
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BC847B Documents

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