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BC847C Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | FUXINSEMI | |
| RoHS | true | |
| Collector Cut-Off Current (Icbo) | 100nA | |
| Collector-Emitter Breakdown Voltage (Vceo) | 45V | |
| Power Dissipation (Pd) | 200mW | |
| DC Current Gain (hFE@Ic,Vce) | 800@2mA,5V |
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BC847C Documents
Download datasheets and manufacturer documentation for BC847C
- Datasheetsfc0017922683644513c59352acba6af9.pdf
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