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BC857BS Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | FUXINSEMI | |
| RoHS | true | |
| Collector Cut-Off Current (Icbo) | 15nA | |
| Collector-Emitter Breakdown Voltage (Vceo) | 45V | |
| Power Dissipation (Pd) | 300mW | |
| DC Current Gain (hFE@Ic,Vce) | 300@2mA,5V |
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BC857BS Documents
Download datasheets and manufacturer documentation for BC857BS
- Datasheets2303231430_FUXINSEMI-BC857BS_C5380688.pdf
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