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MMBT3904T Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | FUXINSEMI | |
| RoHS | true | |
| Collector Cut-Off Current (Icbo) | 100nA | |
| Collector-Emitter Breakdown Voltage (Vceo) | 40V | |
| Power Dissipation (Pd) | 150mW | |
| DC Current Gain (hFE@Ic,Vce) | 300@10mA,1V |
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MMBT3904T Documents
Download datasheets and manufacturer documentation for MMBT3904T
- Datasheets2504a5711ce07912f17d135976650d8c.pdf
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