IN STOCK
: 11356
Min. : 1
Mult. : 1

Not available to buy on line? Want the lower wholesale price? Please sendRFQ, we will respond immediately
MMBT3906 Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | FUXINSEMI | |
| RoHS | true | |
| Collector Cut-Off Current (Icbo) | 100nA | |
| Collector-Emitter Breakdown Voltage (Vceo) | 40V | |
| Power Dissipation (Pd) | 200mW | |
| DC Current Gain (hFE@Ic,Vce) | 300@10mA,1V |
Select at least one checkbox above to show similar products in this category.
MMBT3906 Documents
Download datasheets and manufacturer documentation for MMBT3906
- Datasheets2309251405_FUXINSEMI-MMBT3906_C2984759.pdf
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ

