MMBT3906 Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer FUXINSEMI
RoHS true
Collector Cut-Off Current (Icbo) 100nA
Collector-Emitter Breakdown Voltage (Vceo) 40V
Power Dissipation (Pd) 200mW
DC Current Gain (hFE@Ic,Vce) 300@10mA,1V
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MMBT3906 Documents

Download datasheets and manufacturer documentation for   MMBT3906

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