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S9012 Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | FUXINSEMI | |
| RoHS | true | |
| Collector Cut-Off Current (Icbo) | 100nA | |
| Collector-Emitter Breakdown Voltage (Vceo) | 25V | |
| Power Dissipation (Pd) | 300mW | |
| DC Current Gain (hFE@Ic,Vce) | 400@50mA,1V |
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S9012 Documents
Download datasheets and manufacturer documentation for S9012
- Datasheetsee4a033dfb5af04543d4c12d03b40df6.pdf
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