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S9014 Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | FUXINSEMI | |
| RoHS | true | |
| Collector Cut-Off Current (Icbo) | 100nA | |
| Collector-Emitter Breakdown Voltage (Vceo) | 45V | |
| Power Dissipation (Pd) | 200mW | |
| DC Current Gain (hFE@Ic,Vce) | 1000@1mA,5V |
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S9014 Documents
Download datasheets and manufacturer documentation for S9014
- Datasheets312855c2ba2de885bdde4563034fd5b9.pdf
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