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SS8550 Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | FUXINSEMI | |
| RoHS | true | |
| Collector Cut-Off Current (Icbo) | 100nA | |
| Collector-Emitter Breakdown Voltage (Vceo) | 25V | |
| Power Dissipation (Pd) | 300mW |
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SS8550 Documents
Download datasheets and manufacturer documentation for SS8550
- Datasheetsc018d30ea339bb308b35776a73e947fb.pdf
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