Galaxy Microelectronics 2SC2881G Single BJT Transistors
120 V 0.5 W 0.8 A 80
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2SC2881G Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | GALAXY | |
| Surface Mount | YES | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | |
| Package Description | , | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Transition Frequency-Nom (fT) | 120 MHz | |
| ECCN Code | EAR99 |
| HTS Code | 8541.21.00.75 | |
| Terminal Position | SINGLE | |
| Terminal Form | FLAT | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PSSO-F3 | |
| Configuration | SINGLE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 0.5 W | |
| Collector Current-Max (IC) | 0.8 A | |
| DC Current Gain-Min (hFE) | 80 | |
| Collector-Emitter Voltage-Max | 120 V | |
| VCEsat-Max | 1 V | |
| Collector-Base Capacitance-Max | 30 pF | |
| Power Dissipation Ambient-Max | 0.5 W |
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2SC2881G Documents
Download datasheets and manufacturer documentation for 2SC2881G
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