Galaxy Microelectronics 2SD965A-S Single BJT Transistors
30 V 560 5 A
IN STOCK
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Mult. : 1
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2SD965A-S Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | GALAXY | |
| Surface Mount | YES | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | |
| Package Description | SMALL OUTLINE, R-PDSO-F3 | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE |
| Transition Frequency-Nom (fT) | 150 MHz | |
| ECCN Code | EAR99 | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PDSO-F3 | |
| Configuration | SINGLE | |
| Case Connection | COLLECTOR | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | NPN | |
| Collector Current-Max (IC) | 5 A | |
| DC Current Gain-Min (hFE) | 560 | |
| Collector-Emitter Voltage-Max | 30 V |
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2SD965A-S Documents
Download datasheets and manufacturer documentation for 2SD965A-S
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