Galaxy Microelectronics BC857BW Single BJT Transistors
220 0.1 A 45 V 0.2 W
IN STOCK
Min. : 1
Mult. : 1
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BC857BW Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | GALAXY | |
| Surface Mount | YES | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | |
| Package Description | SOT-323, 3 PIN | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -65 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Transition Frequency-Nom (fT) | 100 MHz | |
| ECCN Code | EAR99 |
| HTS Code | 8541.21.00.95 | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Reach Compliance Code | unknown | |
| Reference Standard | MIL-STD-202; UL RECOGNIZED | |
| JESD-30 Code | R-PDSO-G3 | |
| Configuration | SINGLE | |
| Polarity/Channel Type | PNP | |
| Power Dissipation-Max (Abs) | 0.2 W | |
| Collector Current-Max (IC) | 0.1 A | |
| DC Current Gain-Min (hFE) | 220 | |
| Collector-Emitter Voltage-Max | 45 V | |
| VCEsat-Max | 0.65 V | |
| Collector-Base Capacitance-Max | 4.5 pF | |
| Power Dissipation Ambient-Max | 0.2 W |
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BC857BW Documents
Download datasheets and manufacturer documentation for BC857BW
- Datasheets8907c775c2aa8b8049f16303beba0614.pdf
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