Galaxy Microelectronics BF821 Single BJT Transistors
0.05 A 50 300 V
IN STOCK
Min. : 1
Mult. : 1
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BF821 Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | GALAXY | |
| Surface Mount | YES | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Gross Weight | 147.80 | |
| Transport Packaging Size/Quantity | 47*35*22/20 | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | |
| Part Package Code | SOT-23 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Transition Frequency-Nom (fT) | 60 MHz |
| ECCN Code | EAR99 | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Depth | 100 mm | |
| Reach Compliance Code | unknown | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | R-PDSO-G3 | |
| Configuration | SINGLE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | PNP | |
| Collector Current-Max (IC) | 0.05 A | |
| DC Current Gain-Min (hFE) | 50 | |
| Collector-Emitter Voltage-Max | 300 V | |
| Height | 45 mm | |
| Width | 70 mm |
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BF821 Documents
Download datasheets and manufacturer documentation for BF821
- Datasheetsce9d85b04b0735178dd646ff183c3d36.pdf
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