Galaxy Microelectronics BZV55-B10 Zener Single Diodes
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BZV55-B10 Tech Specifications
| Category | Diodes - Zener - Single | |
| Manufacturer | GALAXY | |
| Surface Mount | YES | |
| Diode Element Material | SILICON | |
| Number of Terminals | 2Terminals | |
| Exterior Housing Material | 1 | |
| Type of module | IGBT | |
| Semiconductor structure | diode/transistor | |
| Max. off-state voltage | 650V | |
| Collector current | 300A | |
| Case | SEMITRANS3 | |
| Electrical mounting | FASTON connectors, | |
| Gate-emitter voltage | ±20V | |
| Pulsed collector current | 900A | |
| Mechanical mounting | screw | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | |
| Package Description | MELF-2 | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | GLASS | |
| Package Shape | ROUND | |
| Package Style | LONG FORM |
| Reference Voltage-Nom | 10 V | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.50 | |
| Terminal Position | END | |
| Terminal Form | WRAP AROUND | |
| Reach Compliance Code | unknown | |
| Reference Standard | MIL-STD-202 | |
| JESD-30 Code | O-LELF-R2 | |
| Polarity | UNIDIRECTIONAL | |
| Configuration | SINGLE | |
| Diode Type | ZENER DIODE | |
| Case Connection | ISOLATED | |
| Topology | boost chopper | |
| Voltage Tol-Max | 2% | |
| Working Test Current | 5 mA | |
| Reverse Current-Max | 0.2 μA | |
| Dynamic Impedance-Max | 20 Ω | |
| Reverse Test Voltage | 7 V | |
| Output Range | 0.5 W | |
| 2nd Connector Number of Positions Loaded | for UPS, | |
| Voltage Temp Coeff-Max | 8 mV/°C | |
| Knee Impedance-Max | 150 Ω |
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BZV55-B10 Documents
Download datasheets and manufacturer documentation for BZV55-B10
- Datasheetsf738139d4ff425560f6e74efd02ab224.pdf
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