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BZV55-C4V7 Tech Specifications
Category | Diodes - Zener - Single | |
Manufacturer | GALAXY | |
Surface Mount | YES | |
Diode Element Material | SILICON | |
Number of Terminals | 2Terminals | |
Reference Voltage-Nom | 4.7 V | |
Power Dissipation (Max) | 0.5 W | |
Package Style | LONG FORM | |
Package Shape | ROUND | |
Package Body Material | GLASS | |
Operating Temperature-Max | 200 °C | |
Number of Elements | 1 Element | |
Package Description | MELF-2 | |
Ihs Manufacturer | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | |
Part Life Cycle Code | Not Recommended | |
Rohs Code | Yes | |
ECCN Code | EAR99 |
HTS Code | 8541.10.00.50 | |
Terminal Position | END | |
Terminal Form | WRAP AROUND | |
Reach Compliance Code | unknown | |
Reference Standard | MIL-STD-202 | |
JESD-30 Code | O-LELF-R2 | |
Polarity | UNIDIRECTIONAL | |
Configuration | SINGLE | |
Diode Type | ZENER DIODE | |
Case Connection | ISOLATED | |
Voltage Tol-Max | 5% | |
Working Test Current | 5 mA | |
Reverse Current-Max | 3 μA | |
Dynamic Impedance-Max | 80 Ω | |
Reverse Test Voltage | 2 V | |
Voltage Temp Coeff-Max | 0.2 mV/°C | |
Knee Impedance-Max | 500 Ω |
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BZV55-C4V7 Documents
Download datasheets and manufacturer documentation for BZV55-C4V7
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