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MJD45H11 Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer GALAXY
Surface Mount YES
Material aluminium
Number of Terminals 2Terminals
Transistor Element Material SILICON
Exterior Housing Material 1
Part Life Cycle Code Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Transition Frequency-Nom (fT) 40 MHz
Maximum current 24 A
Type of heatsink extruded
Heatsink shape grilled
Material finishing raw
Mounting M3 screw,
Heatsinks features for use with ELS3 screw-in solder pin
Plate thickness 8mm
ECCN Code EAR99
Additional Feature TUBE: 80
Terminal Position SINGLE
Terminal Form GULL WING
Depth 47.5 mm
Reach Compliance Code unknown
Reference Standard MIL-STD-202
JESD-30 Code R-PSSO-G2
Configuration SINGLE
Transistor Application SWITCHING
Polarity/Channel Type PNP
JEDEC-95 Code TO-252
Power Dissipation-Max (Abs) 20 W
Collector Current-Max (IC) 8 A
DC Current Gain-Min (hFE) 40
Collector-Emitter Voltage-Max 80 V
VCEsat-Max 1 V
2nd Connector Number of Positions Loaded SOT429,
Collector-Base Capacitance-Max 230 pF
Length 84mm
Width 50mm
Height 31mm
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MJD45H11 Documents

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MJD45H11 brand manufacturers: Galaxy Microelectronics, Elecinsight stock, MJD45H11 reference price.Galaxy Microelectronics. MJD45H11 parameters, MJD45H11 Datasheet PDF and pin diagram description download.You can use the MJD45H11 Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find MJD45H11 pin diagram and circuit diagram and usage method of function,MJD45H11 electronics tutorials.You can download from the Elecinsight.