Galaxy Microelectronics RGP50G Bridge Rectifiers
RECTIFIER DIODE
IN STOCK
Min. : 1
Mult. : 1
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RGP50G Tech Specifications
| Category | Diodes - Bridge Rectifiers | |
| Manufacturer | GALAXY | |
| Surface Mount | NO | |
| Diode Element Material | SILICON | |
| Number of Terminals | 2Terminals | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | |
| Part Package Code | R-6 | |
| Forward Voltage-Max (VF) | 1.3 V | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 125 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | ROUND | |
| Package Style | LONG FORM | |
| ECCN Code | EAR99 |
| Applications | FAST RECOVERY | |
| HTS Code | 8541.10.00.80 | |
| Terminal Position | AXIAL | |
| Terminal Form | WIRE | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | O-PALF-W2 | |
| Configuration | SINGLE | |
| Diode Type | RECTIFIER DIODE | |
| Case Connection | ISOLATED | |
| Output Current-Max | 5 A | |
| Number of Phases | 1Phase | |
| Rep Pk Reverse Voltage-Max | 400 V | |
| Non-rep Pk Forward Current-Max | 300 A | |
| Reverse Current-Max | 5 µA | |
| Reverse Recovery Time-Max | 0.15 µs |
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RGP50G Documents
Download datasheets and manufacturer documentation for RGP50G
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