Galaxy Microelectronics SMBJ6.8 Zener Single Diodes
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SMBJ6.8 Tech Specifications
| Category | Diodes - Zener - Single | |
| Manufacturer | GALAXY | |
| Surface Mount | YES | |
| Diode Element Material | SILICON | |
| Number of Terminals | 2Terminals | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | |
| Breakdown Voltage-Nom | 8.4 V | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| ECCN Code | EAR99 | |
| Additional Feature | EXCELLENT CLAMPING CAPABILITY, PRSM-MIN |
| HTS Code | 8541.10.00.50 | |
| Terminal Position | DUAL | |
| Terminal Form | C BEND | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PDSO-C2 | |
| Polarity | UNIDIRECTIONAL | |
| Configuration | SINGLE | |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE | |
| Rep Pk Reverse Voltage-Max | 6.8 V | |
| Non-rep Peak Rev Power Dis-Max | 600 W | |
| Reverse Current-Max | 200 µA | |
| Breakdown Voltage-Min | 7.56 V | |
| Clamping Voltage-Max | 12.1 V | |
| Reverse Test Voltage | 6.8 V | |
| Breakdown Voltage-Max | 9.24 V |
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SMBJ6.8 Documents
Download datasheets and manufacturer documentation for SMBJ6.8
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