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2SD999L Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | GALAXY | |
| Surface Mount | YES | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | GALAXY SEMI-CONDUCTOR CO LTD | |
| Package Description | SMALL OUTLINE, R-PSSO-F3 | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE | |
| Transition Frequency-Nom (fT) | 130 MHz | |
| ECCN Code | EAR99 | |
| Terminal Position | SINGLE | |
| Terminal Form | FLAT | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PSSO-F3 | |
| Configuration | SINGLE | |
| Case Connection | COLLECTOR | |
| Polarity/Channel Type | NPN | |
| Collector Current-Max (IC) | 1 A | |
| DC Current Gain-Min (hFE) | 135 | |
| Collector-Emitter Voltage-Max | 25 V |
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2SD999L Documents
Download datasheets and manufacturer documentation for 2SD999L
- DatasheetsGSCC-S-A0005389730-1.pdf
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