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BAV199 Tech Specifications

Category Diodes - Bridge Rectifiers
Manufacturer GALAXY
Surface Mount YES
Diode Element Material SILICON
Number of Terminals 3Terminals
Exterior Housing Material 2
Part Life Cycle Code Active
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD
Package Description R-PDSO-G3
Forward Voltage-Max (VF) 1.25 V
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
ECCN Code EAR99
HTS Code 8541.10.00.70
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G3
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode Type RECTIFIER DIODE
Output Current-Max 0.16 A
Number of Phases 1Phase
Rep Pk Reverse Voltage-Max 85 V
Non-rep Pk Forward Current-Max 4 A
Reverse Current-Max 0.005 μA
Breakdown Voltage-Min 85 V
Reverse Recovery Time-Max 0.003 μs
Reverse Test Voltage 75 V
Output Range 0.25 W
2nd Connector Number of Positions Loaded GENERAL PURPOSE
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BAV199 Documents

Download datasheets and manufacturer documentation for   BAV199

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