Galaxy Semi-Conductor Co Ltd BC857S Single BJT Transistors
0.2 A 125 45 V
IN STOCK
Min. : 1
Mult. : 1
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BC857S Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | GALAXY | |
| Surface Mount | YES | |
| Number of Terminals | 6Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 2 | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | GALAXY SEMI-CONDUCTOR CO LTD | |
| Package Description | SMALL OUTLINE, R-PDSO-G6 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE |
| Transition Frequency-Nom (fT) | 200 MHz | |
| ECCN Code | EAR99 | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PDSO-G6 | |
| Configuration | SEPARATE, 2 ELEMENTS | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | PNP | |
| Collector Current-Max (IC) | 0.2 A | |
| DC Current Gain-Min (hFE) | 125 | |
| Collector-Emitter Voltage-Max | 45 V |
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BC857S Documents
Download datasheets and manufacturer documentation for BC857S
- Datasheets158d3d58211953f0e2b05bfe7b78c6b2.pdf
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