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BCX52 Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | GALAXY | |
| Surface Mount | YES | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | GALAXY SEMI-CONDUCTOR CO LTD | |
| Package Description | SMALL OUTLINE, R-PSSO-F3 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Transition Frequency-Nom (fT) | 125 MHz | |
| Gross Weight | 0.05 | |
| Wire Size | 24 AWG; 0.25 mm2 | |
| Contact Material | tinned copper | |
| Insulator Material | vinyl, nylon |
| Uninsulated Length | 6 mm | |
| ECCN Code | EAR99 | |
| Type | insulated tubular sleeve terminal (DN series) | |
| Terminal Position | SINGLE | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | R-PSSO-F3 | |
| Configuration | SINGLE | |
| Transistor Application | AMPLIFIER | |
| Size | s1=0.15 d1=0.8 s2=0.3 d2=1.9 | |
| Polarity/Channel Type | PNP | |
| Collector Current-Max (IC) | 1 A | |
| DC Current Gain-Min (hFE) | 25 | |
| Collector-Emitter Voltage-Max | 60 V | |
| Length | 11 mm |
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BCX52 Documents
Download datasheets and manufacturer documentation for BCX52
- Datasheets0fc56ba6635954ab9d693530102a12e7.pdf
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