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FDB105S Tech Specifications
| Category | Diodes - Bridge Rectifiers | |
| Manufacturer | GALAXY | |
| Surface Mount | YES | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | GALAXY SEMI-CONDUCTOR CO LTD | |
| Forward Voltage-Max (VF) | 1.1 V | |
| Number of Elements | 4 Elements | |
| Operating Temperature-Max | 125 °C | |
| ECCN Code | EAR99 |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | unknown | |
| Configuration | BRIDGE, 4 ELEMENTS | |
| Diode Type | BRIDGE RECTIFIER DIODE | |
| Output Current-Max | 1 A | |
| Number of Phases | 1Phase | |
| Rep Pk Reverse Voltage-Max | 600 V | |
| Non-rep Pk Forward Current-Max | 30 A | |
| Breakdown Voltage-Min | 600 V |
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FDB105S Documents
Download datasheets and manufacturer documentation for FDB105S
- DatasheetsGSCCS00181-1.pdf
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