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G2R1000MT17J Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer GeneSiC Semiconductor
Package / Case QFN
Mounting Type Surface Mount
Supplier Device Package TO-263-7
Standard Frequency 125
Product Depth (mm) 5(mm)
Operating Temp Range -40C to 85C
Mounting Styles Surface Mount
Operating Supply Voltage (Max) 3.63(V)
Operating Supply Voltage (Min) 2.97(V)
Programmable No
Continuous Drain Current Id 4A
Vds - Drain-Source Breakdown Voltage 1.7 kV
Typical Turn-On Delay Time 9 ns
Vgs th - Gate-Source Threshold Voltage 4.5 V
Pd - Power Dissipation 44 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 5 V, + 20 V
Unit Weight 0.056438 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 50
Forward Transconductance - Min 0.76 S
Channel Mode Enhancement
Manufacturer GeneSiC Semiconductor
Brand GeneSiC Semiconductor
Qg - Gate Charge 11 nC
Rds On - Drain-Source Resistance 1 Ohms
RoHS Details
Typical Turn-Off Delay Time 13 ns
Id - Continuous Drain Current 5 A
Package Tube
Base Product Number G2R1000
Current - Continuous Drain (Id) @ 25℃ 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Mfr GeneSiC Semiconductor
Power Dissipation (Max) 54W (Tc)
Product Status Active
Usage Level Industrial grade
Packaging Bulk
Series G2R
Operating Temperature -55°C ~ 175°C (TJ)
Type CLOCK OSCILLATOR
Subcategory MOSFETs
Technology SiC
Frequency Stability ±25(ppm)
Pin Count 6
Symmetry-Max 55(%)
Configuration Single
Number of Channels 1 ChannelChannel
Power Dissipation 54W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2A, 20V
Vgs(th) (Max) @ Id 4V @ 2mA
Input Capacitance (Ciss) (Max) @ Vds 139 pF @ 1000 V
Rise Time 19 ns
Drain to Source Voltage (Vdss) 1700 V
Vgs (Max) +20V, -10V
Product Type MOSFET
Transistor Type MOSFET
Screening Level Industrial
Channel Type N Channel
FET Feature -
Product MOSFET
Product Category MOSFET
Product Length (mm) 7(mm)
Product Height (mm) 0.9(mm)
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